high qe multialkali photocathode new electro?ptical design 28 mm (1-1/8 inch) diameter, 9-stage, side-on type high cathode sensitivity luminous ................................................. 450 a/lm (typ.) radiant at 450 nm (peak) ........................ 85 ma/w (typ.) quantum efficiency at 260 nm (peak) .... 26.3 % (typ.) high anode sensitivity at 1000 v luminous ................................................. 4500 a/lm (typ.) radiant at 450 nm (peak) ........................ 8.5 10 5 a/w (typ.) wide spectral response ............................. 185 nm to 900 nm high signal to noise ratio newly designed electro optical structure biomedical fluorescence detection laser scanning detection spectroscopy semiconductor inspection environmental monitoring figure 2: typical spectral response figure 1: electro optical structure tpmsb0201ea tpmsc0024eb photomultiplier tube R9220 features applications 100 10 1 0.1 100 200 300 400 500 600 700 800 900 1000 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) 0.01 quantum efficiency cathode radiant sensitivity light photoelectron trajectories grid glass bulb anode 9th dynode photocathode 2nd dynode 1st dynode information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?006 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office.
a: averaged over any interval of 30 seconds maximum. b: the light source is a tungsten filament lamp operated at a distribution temperature of 2856k. supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. c: red/white ratio is the quotient of the cathode current measured using a red filter (toshiba r-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as note b. d: the value is cathode output current when a blue filter (corning cs 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as note b. e: measured with the same light source as note b and with the voltage distribution ratio shown in table 1 below. f: measured with the same supply voltage and voltage distribution ratio as note e after removal of light. g : the rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. h: the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. in measurement, the whole photocathode is illuminated. i : also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times. j : hysteresis is temporary instability in anode current after light and voltage are applied. (1)light hysteresis the tube is operated at 750 volts with an anode current of 1 microampere for 5 minutes. the light is then removed from the tube for a minute. the tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)voltage hysteresis the tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. the light is then removed from the tube and the supply voltage is quickly increased to 800 volts. after a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. photomultiplier tube R9220 notes specifications hysteresis = 100(%) l max. ? l min. l i tpmsb0002ea time max. l min. l i l anode current 0 5 6 7 (minutes) electrodes k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p ratio 1 111111111 suppiy voltage: 1000 v, k: cathode, dy: dynode, p: anode table 1: voltage distribution ratio general maximum ratings (absolute maximum values) characteristlcs (at 25 c) value 1250 250 0.1 v v ma unit parameter supply voltage average anode current a typ. max. unit 50 % % % a/lm ma/w ma/w a/lm a/w na ns ns ns % % 26.3 23.4 13.3 450 85 68 0.4 12.5 4500 8.5 10 5 1.0 10 7 10 2.2 22 1.2 0.1 1.0 min. quantum efficiency luminous b radiant red/white ratio c blue sensitivity index d luminous e radiant at 450 nm (peak) anode pulse rise time g electron transit time h transit time spread (tts) i light hysteresis voltage hysteresis at 260 nm at 450 nm at 633 nm at 450 nm at 633 nm 375 1000 parameter cathode sensitivity anode sensitivity gain e anode dark current f (after 30 min storage in darkness) time response anode current stability j between anode and cathode between anode and last dynode parameter description/value unit spectral response wavelength of maximum response photocathode window material dynode direct interelectrode capacitances base weight operating ambient temperature storage temperature suitabie socket suitabie socket assembly 185 to 900 450 multialkali 8 24 uv glass circular-cage 9 4 6 11-pin base jedec no. b11-88 approx. 45 -30 to +50 -30 to +50 e678?1a (sold separately) e717?3 (sold separately) nm nm mm pf pf g c c materiai minimum effective area structure number of stages anode to last dynode anode to all other electrodes
figure 3: typical temperature characteristics of dark current (at 1000 v, after 30 minute storage in darkness) figure 4: anode luminous sensitivity and gain characteristics figure 5: typical time response tpmsb0203eb tpmsb0202eb tpmsb0052eb figure 6: typical temperature coefficient of anode sensitivity tpmsb0053ec 100 10 1 0.1 -30 -10 -20 0 +20 +50 +10 +30 +40 temperature ( c) anode dark current (na) 0.01 500 700 1000 1500 time (ns) supply voltage (v) 1 100 10 transit time rise time wavelength (nm) temperature coefficient ( c -1 ) 200 400 600 800 1000 +0.04 +0.01 -0.02 +0.03 +0.02 0 -0.01 -0.0025 -0.0013 500 700 1000 1500 gain anode luminous sensitivity (a/lm) supply voltage (v) 10 1 10 2 10 3 10 4 10 5 10 0 10 -1 10 4 10 5 10 6 10 7 10 8 10 2 10 3 typical gain typical anode sensitivity minimum anode sensitivity
tpms1071e02 jul. 2006 ip warning personal safety hazards electrical shock operating voltages applied to this device present a shock hazard. photomultiplier tube R9220 figure 7: dimensional outline and basing diagram (unit: mm) figure 8: socket ( unit: mm ) figure 9: d-type socket assembly (unit: mm) hamamatsu also provides c4900 series compact high voltage power supplies and c6270 series dp type socket assemblies which incorporate a dc to dc converter type high voltage power supply. * * patent pending: japan 4, usa 4, europe 4 tacca0002eh tpmsa0001ea bottom view (basing diagram) tpmsa0009eb cross section tacca0064ea 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 28.5 1.5 8 min. photocathode 24 min. 49.0 2.5 80 max. 94 max. 32.2 0.5 11 pin base jedec no. b11-88 11 photo - cathode 3.25 2.5 6.0 3.5 33 5 49 3.5 38 29 4 18 potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1 sold separately sold separately e678-11a e717-63 hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site www.hamamatsu.com
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